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NVH4L070N120M3S AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NVH4L070N120M3S product

NVH4L070N120M3S

MOSFETs - Single

SiC MOSFETAutomotive1200V

The NVH4L070N120M3S is a high-performance 1200V SiC MOSFET optimized for automotive power conversion.

Best for

  • Automotive power conversion
  • High-efficiency DC-DC stages

Avoid if

  • Low-voltage applications where SiC is not cost-effective

Check before use

  • Gate drive voltage compatibility
  • Thermal design

Key specifications

Drain-Source Voltage
1200 V
On-Resistance
65 mΩ
Continuous Drain Current
34 A

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

AutomotivePower Conversion

Datasheet

nvh4l070n120m3s-d.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NVH4L070N120M3S: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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3D Model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an EliteSiC N-channel MOSFET from onsemi, rated for 1200V and 34A, specifically designed for automotive power electronics.