NVMFS4C310N-HXY Datasheet, Specs, Alternatives & ECAD | HXY MOSFET | PartGenie

AI summary

NVMFS4C310N-HXY product

The NVMFS4C310N is a 30V N-Channel MOSFET in a DFN5X6-8L package, optimized for low RDS(ON) and efficient switching in battery protection and power management circuits.

Best for

Battery management systems
Power switching

Avoid if

Applications requiring extremely low gate threshold voltages below 1V

Check before use

Thermal dissipation requirements at 80A

Key specifications

VDS: 30 V
ID: 80 A
RDS(ON): 4.7 mΩ

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ManagementBattery Protection

Datasheet

9a25becb20aa9303a7d19deb546db9d2_2403261740_HXY-MOSFET-NVMFS4C310N-HXY_C22367101.pdf

800 KB

CAD Models

Download ECAD models for NVMFS4C310N-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for high-efficiency switching applications, featuring a low RDS(ON) of 4.7mΩ.