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NVTFS4C06N-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NVTFS4C06N-HXY product

NVTFS4C06N-HXY

MOSFETs - Single

MOSFETN-Channel30VDFN3X3-8L

The NVTFS4C06N is a 30V N-Channel MOSFET in a DFN3X3-8L package, optimized for high-efficiency switching and battery protection.

Best for

  • Battery protection
  • Load switching

Avoid if

  • Applications requiring high-voltage isolation beyond 30V

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
30 V
ID
60 A
RDS(on)
5.5 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

8db46c1b6031ce79271b9e8bd72234d7_HXY MOSFET(华轩阳电子)&NVTFS4C06N-HXY.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NVTFS4C06N-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology for low RDS(on) and low gate charge.