ProjectsPricingInsights

NX7002BKR-ES AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

NX7002BKR-ES product

NX7002BKR-ES

MOSFETs - Single

N-ChannelMOSFETSOT-2360V

The NX7002BKR-ES is a 60V N-channel trench MOSFET in a SOT-23 package, designed for low-power switching and DC-DC conversion applications.

Best for

  • Low-power DC-DC conversion
  • Signal switching
  • Load management

Avoid if

  • High-current applications exceeding 300mA
  • High-temperature environments without adequate heat sinking

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

Vdss
60 V
Id
0.3 A
RDS(on)
1.85 Ω

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementGeneral Switching

Datasheet

1067645cb4637a5c1ceb4ecf6b491c3f_2210271630_ElecSuper-NX7002BKR-ES_C5224230.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for NX7002BKR-ES: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel enhancement mode MOSFET utilizing trench technology, optimized for low gate charge and efficient switching.