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OSP160N10G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

OSP160N10G product

OSP160N10G

MOSFETs - Single

MOSFETN-ChannelPower Trench100V

The OSP160N10G is a 100V, 160A N-Channel Power Trench MOSFET in a TO-220AB package, optimized for high-efficiency power conversion tasks.

Best for

  • DC-DC converters
  • Synchronous rectification

Avoid if

  • Applications requiring extremely low gate charge
  • Space-constrained designs where TO-220AB is too large

Check before use

  • Thermal design
  • Gate driver current capability

Key specifications

VDSS
100 V
ID
160 A
RDS(on)
3.7 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

29f3fbc22ad4816cb992d31c7d7cc82a_2401311442_OSEN-OSP160N10G_C20607803.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for OSP160N10G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The OSP160N10G is an N-Channel Power Trench MOSFET manufactured by OSEN, designed for high-power applications requiring efficient switching and low on-resistance.