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PDTD123YT,215 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

PDTD123YT,215 product

PDTD123YT,215

Bipolar (BJT)

NPNRETResistor-EquippedSOT23

The PDTD123YT is a 500 mA NPN resistor-equipped transistor (RET) with integrated bias resistors, ideal for space-saving digital switching applications.

Best for

  • Digital switching
  • Controlling IC inputs
  • Automotive/Industrial digital segments

Avoid if

  • High-power linear amplification
  • Applications requiring different bias resistor ratios

Check before use

  • Thermal dissipation limits
  • Input voltage levels

Key specifications

VCEO
50 V
IC
500 mA
R1
2.2 kΩ
R2
10 kΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Application

AutomotiveIndustrialDigital Switching

Datasheet

NXP-Semiconductors-company-13.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for PDTD123YT,215: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 50 V, 500 mA NPN resistor-equipped transistor (RET) featuring integrated bias resistors (R1=2.2 kΩ, R2=10 kΩ) in a surface-mount SOT23 package.