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PMDXB550UNEZ AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

PMDXB550UNEZ product

PMDXB550UNEZ

MOSFETs - Arrays

Dual MOSFETN-ChannelTrenchDFN1010

The PMDXB550UNEZ is a dual N-channel Trench MOSFET in a compact DFN1010B-6 package, ideal for space-constrained switching and driver applications.

Best for

  • Relay drivers
  • Load switches
  • Switching circuits

Avoid if

  • High-power applications exceeding 285mW dissipation

Check before use

  • Thermal dissipation capabilities of the PCB

Key specifications

VDS
30 V
ID
590 mA
RDSon
670 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General SwitchingPower Management

Datasheet

NXP-Semiconductors-company-13.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for PMDXB550UNEZ: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode MOSFET using Trench technology, optimized for low-voltage, high-density applications.