ProjectsPricingInsights

PMDXB600UNEZ AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

PMDXB600UNEZ product

PMDXB600UNEZ

FETs

MOSFETDual N-ChannelTrenchDFN1010B-6

The PMDXB600UNE is a dual N-channel Trench MOSFET in a compact DFN1010B-6 package, suitable for space-constrained switching and driver applications.

Best for

  • Relay drivers
  • Load switches
  • High-speed line drivers

Avoid if

  • High-power applications exceeding 265mW dissipation

Check before use

  • Thermal management on the PCB

Key specifications

VDS
20 V
ID
600 mA
RDS(on)
470 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Application

General SwitchingPower Management

CAD Models

Download ECAD models for PMDXB600UNEZ: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Where to Buy

Real-time and catalog pricing from verified distributors

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode MOSFET using Trench technology, housed in an ultra-small DFN1010B-6 leadless package.