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PMDXB950UPEZ AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

PMDXB950UPEZ product

PMDXB950UPEZ

FETs

MOSFETP-ChannelDualTrench

The PMDXB950UPE is a dual P-channel Trench MOSFET in a compact DFN1010B-6 package, suitable for space-constrained switching and driver applications.

Best for

  • Relay driving
  • Load switching
  • Space-constrained designs

Avoid if

  • High-power applications exceeding 265mW dissipation

Check before use

  • Thermal pad layout on PCB

Key specifications

VDS
-20 V
ID
-500 mA
RDSon
1.02 Ω

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Application

General SwitchingPower Management

Datasheet

DSASF4000-5754.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for PMDXB950UPEZ: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual P-channel enhancement mode MOSFET using Trench technology, optimized for small-signal switching in compact electronic designs.