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PNMT8N1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

PNMT8N1 product

PNMT8N1

MOSFETs - Single

CompositePNPN-MOSFETDFN

The PNMT8N1 is a compact composite device integrating a PNP transistor and an N-channel MOSFET, suitable for space-constrained power switching applications.

Best for

  • Space-constrained power switching
  • Signal conditioning

Avoid if

  • High-power applications exceeding 3A or 30V

Check before use

  • Thermal dissipation limits
  • Gate drive voltage levels

Key specifications

Transistor VCEO
-30 V
MOSFET VDS
20 V
Package
DFN3*2*0.75

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementGeneral Purpose

Datasheet

12c330726df1596089f7d457b54a00e7_datasheet.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for PNMT8N1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a composite semiconductor device from Prisemi that combines a PNP epitaxial planar silicon transistor and an N-channel MOSFET into a single DFN3*2*0.75 package.