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Q-SSC0865-TF AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Q-SSC0865-TF product

Q-SSC0865-TF

Diodes - Rectifiers - Single

SiCSchottky650V8A

The Q-SSC0865-TF is a 650V, 8A Silicon Carbide (SiC) Schottky Barrier Diode designed for high-efficiency power conversion applications.

Best for

  • PFC circuits
  • High-efficiency power supplies

Avoid if

  • Applications requiring extremely low-profile surface mount components

Check before use

  • Thermal design and heat sinking requirements

Key specifications

VRRM
650 V
IF
8 A
VF
1.4 V

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SuppliesIndustrial

Datasheet

fc825ac424b516f905bca92d3d5bec05_2209081730_Shikues-Q-SSC0865-TF_C5160063.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for Q-SSC0865-TF: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 650V, 8A SiC Schottky Barrier Diode featuring zero reverse recovery current and temperature-independent switching behavior.