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RC65D600E AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

RC65D600E product

RC65D600E

Component

650 VGaN HEMTnormally-off600 mΩTO252-2Lpower switching

RC65D600E is a 650 V normally-off GaN HEMT for compact switching-power designs where low gate charge and fast switching are useful.

Best for

  • Low-current 650 V switching stages
  • Adapters and industrial power circuits
  • Designs needing low gate charge

Avoid if

  • The application requires substantially lower high-temperature conduction loss
  • Package footprint or terminal arrangement has not been verified
  • Lifecycle qualification is mandatory but unavailable

Check before use

  • Confirm TO252-2L land pattern and terminal arrangement
  • Check gate-driver voltage and layout inductance
  • Calculate losses at maximum junction temperature

Key specifications

Drain-source rating
650 V
On-resistance
600 mΩ typ at 25°C
Continuous drain current
4.8 A at TC=25°C
Total gate charge
7 nC typ
Package
TO252-2L

Compliance & Environment

RoHS
RoHS compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Switch-mode power conversionIndustrial power electronicsAC/DC adapters

Datasheet

2113d1df47f785267d8a0c6f60cd9127_RC65D600E.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for RC65D600E: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

RC65D600E is a RealChip normally-off 650 V gallium-nitride HEMT supplied in a TO252-2L package. It is specified for 4.8 A continuous drain current at TC=25°C.