RD3P200SNFRATL-HXY Datasheet, Specs, Alternatives & ECAD | HXY MOSFET | PartGenie

AI summary

RD3P200SNFRATL-HXY product

The RD3P200SNFRATL is a 100V, 30A N-Channel MOSFET in a DPAK package, designed for efficient switching in battery protection and power management applications.

Best for

Battery protection
Load switching
UPS

Avoid if

Applications requiring extremely low gate drive voltages below 4.5V

Check before use

Thermal dissipation requirements
Gate drive circuit compatibility

Key specifications

VDS: 100 V
ID: 30 A
RDS(on): 48 mΩ

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ManagementBattery Protection

Datasheet

c75ea6198585efaac57895d227a5b1ca_2403261740_HXY-MOSFET-RD3P200SNFRATL-HXY_C22367065.pdf

800 KB

CAD Models

Download ECAD models for RD3P200SNFRATL-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET utilizing advanced trench technology, optimized for low RDS(ON) and low gate charge.