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RFD16N05LS-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

RFD16N05LS-HXY product

RFD16N05LS-HXY

MOSFETs - Single

N-ChannelMOSFET60VTO-252

The RFD16N05LS is a 60V, 20A N-Channel MOSFET in a TO-252-2L package, designed for efficient switching in battery protection and power management circuits.

Best for

  • Battery protection
  • Load switching

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V

Check before use

  • Thermal design and gate drive voltage levels

Key specifications

Drain-Source Voltage
60 V
Continuous Drain Current
20 A
On-Resistance
32 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

b2fe1a6d348d1c4108b3c269e1d173b5_HXY MOSFET(华轩阳电子)&RFD16N05LS-HXY.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for RFD16N05LS-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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3D Model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology for low gate charge and low on-resistance.