ProjectsPricingInsights

RN1106MFV,L3F AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

RN1106MFV,L3F product

RN1106MFV,L3F

Bipolar (BJT)

NPNPre-BiasedAEC-Q101VESM

The RN1106MFV is a compact, AEC-Q101 qualified NPN pre-biased transistor featuring integrated 4.7kΩ/47kΩ resistors, ideal for space-constrained switching and driver applications.

Best for

  • Space-constrained switching
  • Automotive driver circuits

Avoid if

  • High-power applications exceeding 150mW

Check before use

  • Thermal management in high-density designs

Key specifications

VCEO
50 V
IC
100 mA
R1/R2
4.7kΩ / 47kΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Application

SwitchingAutomotive

Datasheet

c7193e441c4440c9ef35fee495c95e6c_2301111830_TOSHIBA-RN1106MFV-L3F_C5349733.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for RN1106MFV,L3F: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a silicon NPN epitaxial type transistor with built-in bias resistors, housed in an ultra-small VESM package.