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RN1107MFV,L3F(CT AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

RN1107MFV,L3F(CT product

RN1107MFV,L3F(CT

Power Management (PMIC)

NPNPre-BiasedAEC-Q101SOT-723

The RN1107MFV is a compact NPN pre-biased transistor featuring integrated 10kΩ and 47kΩ resistors, ideal for space-constrained switching and driver applications.

Best for

  • Space-constrained switching circuits
  • Inverter and driver stages
  • Automotive applications (AEC-Q101 qualified)

Avoid if

  • High-power applications exceeding 150mW
  • Designs requiring different bias resistance ratios

Check before use

  • Thermal management in high-density layouts
  • Solder pad dimensions for the VESM package

Key specifications

R1
10 kΩ
R2
47 kΩ
VCEO
50 V
IC
100 mA

Compliance & Environment

RoHS
-
REACH
-
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Application

SwitchingAutomotive

Datasheet

2164d5f57bffe0871d9171c802ac6f8c_2311151858_TOSHIBA-RN1107MFV-L3F-CT_C17532991.pdf

800 KB

Datasheet AI

CAD Models

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EDA Symbol
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PCB Footprint
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The RN1107MFV is a silicon NPN epitaxial transistor with built-in bias resistors, designed to reduce external component count in compact circuit designs.