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RN1306,LF AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

RN1306,LF product

RN1306,LF

Power Management (PMIC)

NPNPre-BiasedBJTSC-70

The RN1306,LF is a Toshiba NPN pre-biased transistor featuring integrated 4.7kΩ and 47kΩ resistors, optimized for space-constrained switching and driver circuits.

Best for

  • Compact switching circuits
  • Inverter stages
  • Signal interfacing

Avoid if

  • High-power applications exceeding 100mW dissipation
  • Circuits requiring different bias resistor ratios

Check before use

  • Input voltage levels for switching thresholds
  • Thermal management in dense layouts

Key specifications

R1
4.7 kΩ
R2
47 kΩ
VCEO
50 V

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075

Application

SwitchingInverter Circuits

Datasheet

4821241664c3158b04d5db0958a28845_2311140926_TOSHIBA-RN1306-LF_C17287336.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for RN1306,LF: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a silicon NPN epitaxial type bipolar transistor with built-in bias resistors, designed to reduce external component count in switching and driver applications.