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RQ3E120ATTB AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

RQ3E120ATTB product

RQ3E120ATTB

MOSFETs - Single

MOSFETP-ChannelAutomotiveROHM

The RQ3E120ATTB is a high-performance P-channel power MOSFET from ROHM, optimized for switching applications in automotive and industrial environments.

Best for

  • Automotive switching
  • Power management

Avoid if

  • Applications requiring N-channel polarity

Check before use

  • Thermal dissipation requirements

Key specifications

VDSS
-30 V
ID
±39 A
RDS(on)
8.0 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
nan
MSL
nan
ECCN
EAR99
HTSUS
8541290095.0

Application

AutomotivePower Switching

Datasheet

RQ3E120ATTB-Rohm-datasheet-102762274.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for RQ3E120ATTB: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-channel power MOSFET with a -30V drain-source voltage and 39A continuous drain current, housed in an HSMT8 package.