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RTE002P02-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

RTE002P02-HXY product

RTE002P02-HXY

MOSFETs - Single

P-ChannelMOSFETSOT-523

The RTE002P02 is a compact P-Channel MOSFET in an SOT-523 package, optimized for low-voltage battery protection and load switching.

Best for

  • Battery protection
  • Load switching

Avoid if

  • High-power applications exceeding 150mW dissipation

Check before use

  • Gate drive voltage levels

Key specifications

VDS
-20V
ID
-0.66A
RDS(on)
<560mΩ (@-4.5V)

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

97749e821d308370a6b14b52bb1d9927_2403261740_HXY-MOSFET-RTE002P02-HXY_C22367059.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for RTE002P02-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel Enhancement Mode MOSFET using trench technology, designed for low-voltage switching applications.