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RUE002N02-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

RUE002N02-HXY product

RUE002N02-HXY

MOSFETs - Single

MOSFETN-Channel20VSOT-523

The RUE002N02 is a 20V N-Channel MOSFET in a SOT-523 package, optimized for low-voltage switching and battery protection.

Best for

  • Battery protection circuits
  • Load switching

Avoid if

  • High-power applications exceeding 0.15W dissipation

Check before use

  • Thermal design and gate drive voltage levels

Key specifications

VDS
20 V
ID
0.8 A
RDS(on)
<250 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

6eabd4a838d62b7d0bbfe4cdd3202aa8_2403261740_HXY-MOSFET-RUE002N02-HXY_C22367112.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for RUE002N02-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using trench technology, suitable for low-voltage switching applications.