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S-LMBT5551LT1G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

S-LMBT5551LT1G product

S-LMBT5551LT1G

Transistors - Bipolar (BJT) - Single

NPNHigh VoltageAEC-Q101SOT-23

The S-LMBT5551LT1G is an AEC-Q101 qualified high-voltage NPN transistor in a SOT-23 package, ideal for automotive and industrial control circuits.

Best for

  • Automotive control circuits
  • High-voltage switching
  • Industrial signal processing

Avoid if

  • Applications requiring power dissipation significantly above 225mW
  • Extremely high-frequency RF applications

Check before use

  • Thermal management on the PCB
  • Voltage transients in the target circuit

Key specifications

VCEO
160 V
IC
600 mA
hFE
80 - 250

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

AutomotiveIndustrial

Datasheet

e0c3744930250042825ec5b7e35f16f0_2201121800_LRC-S-LMBT5551LT1G_C2936715.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for S-LMBT5551LT1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage NPN bipolar junction transistor (BJT) designed for automotive and industrial applications, featuring AEC-Q101 qualification.