S1M040120D Datasheet, Specs, Alternatives & ECAD | Sichainsemi | PartGenie

AI summary

S1M040120D product

The S1M040120D is a 1200V SiC MOSFET optimized for high-efficiency power electronics, offering low switching losses and robust thermal performance up to 175°C.

Best for

EV charging infrastructure
Industrial power supplies
Renewable energy inverters

Avoid if

Low-voltage applications where Si MOSFETs are more cost-effective

Check before use

Gate drive voltage compatibility
Thermal dissipation requirements

Key specifications

VDS: 1200 V
ID: 73 A
RDS(on): 40 mΩ

Compliance & Environment

RoHS: Compliant
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ConversionAutomotive

Datasheet

3c2574888bbfccdf56dca6a44d8f8d08_2403191131_Sichainsemi-S1M040120D_C22363606.pdf

800 KB

CAD Models

Download ECAD models for S1M040120D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1200V N-Channel Silicon Carbide (SiC) power MOSFET in a TO-247-3L package, designed for high-voltage, high-efficiency power conversion.