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S1M040120D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

S1M040120D product

S1M040120D

MOSFETs - Single

SiC MOSFET1200VPower Electronics

The S1M040120D is a high-performance 1200V SiC MOSFET optimized for high-efficiency power conversion in EV and industrial applications.

Best for

  • EV charging infrastructure
  • High-efficiency power conversion

Avoid if

  • Low-voltage applications where SiC benefits are not required

Check before use

  • Gate driver voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
1200 V
ID
73 A
RDS(on)
40 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionAutomotive

Datasheet

3c2574888bbfccdf56dca6a44d8f8d08_2403191131_Sichainsemi-S1M040120D_C22363606.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for S1M040120D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1200V N-Channel Silicon Carbide (SiC) Power MOSFET, designed for high-speed, high-efficiency power switching.