What are the key specifications of the S1M040120H?

It features a 1200V breakdown voltage, 40mΩ typical on-resistance, and a 76A continuous drain current rating.

What is the pinout of S1M040120H?

Use the S1M040120H datasheet for the official pinout diagram and pin names. In PartGenie, ask Datasheet AI about S1M040120H pinout to locate pins, power rails, and interface signals before layout.

S1M040120H Datasheet, Specs, Alternatives & ECAD | SICHAIN(清纯)

AI summary

The S1M040120H is a 1200V SiC Power MOSFET featuring low on-resistance and high-speed switching capabilities, optimized for EV and power conversion systems.

Best for

EV chargers
DC-DC converters
PFC stages

Avoid if

Low-voltage applications where SiC is not cost-effective

Check before use

Gate drive voltage requirements
Thermal dissipation

Key specifications

VDS: 1200 V
RDS(on): 40 mΩ
ID: 76 A

Application

Power ConversionAutomotive

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1200V N-Channel Silicon Carbide (SiC) MOSFET designed for high-efficiency power applications.