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S1M075120H2 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

S1M075120H2 product

S1M075120H2

Component

SiC MOSFET1200VHigh Efficiency

The S1M075120H2 is a high-performance 1200V SiC MOSFET optimized for high-efficiency power conversion in EV and industrial applications.

Best for

  • EV charging infrastructure
  • High-frequency power conversion

Avoid if

  • Low-voltage applications where Si MOSFETs are more cost-effective

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
1200 V
ID
44 A
RDS(on)
75 mΩ

Application

Power ConversionAutomotive

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1200V Silicon Carbide (SiC) N-Channel enhancement mode MOSFET, designed for high-efficiency power switching.