It is a 1200V Silicon Carbide (SiC) N-Channel enhancement mode MOSFET, designed for high-efficiency power switching.
S1M075120H2 AI Analysis:
Datasheet, Specs, Alternatives & ECAD
AI summary
Key specifications
- VDS
- 1200 V
- ID
- 44 A
- RDS(on)
- 75 mΩ
Application
Power ConversionAutomotive
Alternative components
Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.
