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S8050M-D HY3D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

S8050M-D HY3D product

S8050M-D HY3D

Transistors - Bipolar (BJT) - Single

NPNBJTSOT-23Amplifier

The S8050M-D is a standard NPN power transistor in a SOT-23 package, ideal for general-purpose amplification.

Best for

  • General purpose amplification
  • Power amplifier circuits

Avoid if

  • High-voltage applications exceeding 25V
  • High-current applications exceeding 800mA

Check before use

  • Thermal management in SOT-23 package
  • hFE classification matching

Key specifications

VCEO
25 V
IC
800 mA
hFE
160-300

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power AmplifierGeneral Purpose

Datasheet

70f1bc4048717368827ef1d4fea8f161_BLUE ROCKET(蓝箭)&S8050M-D HY3D.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for S8050M-D HY3D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a silicon NPN bipolar junction transistor (BJT) in a SOT-23 surface-mount package, commonly used in power amplifier circuits.