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SCT1000N170 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SCT1000N170 product

SCT1000N170

MOSFETs - Single

SiC MOSFET1700VPower MOSFET

The SCT1000N170 is a 1700 V SiC Power MOSFET optimized for high-voltage, high-efficiency power conversion in server and switch-mode power supplies.

Best for

  • Server power supplies
  • High-voltage switching

Avoid if

  • Low-voltage applications where standard Si MOSFETs are more cost-effective

Check before use

  • Gate drive compatibility
  • Thermal dissipation at high temperatures

Key specifications

VDS
1700 V
ID
7 A
RDS(on)
1.3 Ω
Package
HiP247

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power

Datasheet

fead08c3672cd61b5875f1ce971d1ea1_2211080730_STMicroelectronics-SCT1000N170_C2970166.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SCT1000N170: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a silicon carbide (SiC) Power MOSFET with a 1700 V breakdown voltage, designed for high-efficiency power applications.