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SCT3080KLGC11 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SCT3080KLGC11 product

SCT3080KLGC11

MOSFETs - Single

SiC MOSFET1200VHigh Efficiency

The SCT3080KL is a high-performance 1200V SiC N-channel MOSFET designed for high-efficiency power conversion.

Best for

  • Solar inverters
  • DC/DC converters
  • Motor drives

Avoid if

  • Low-voltage, low-power applications where standard silicon MOSFETs are more cost-effective.

Check before use

  • Gate drive voltage requirements and thermal management.

Key specifications

VDSS
1200 V
ID
31 A
RDS(on)
80 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
nan
MSL
nan
ECCN
EAR99
HTSUS
8541290095.0

Application

Power ConversionIndustrial

Datasheet

SCT3080KLGC11-Rohm-datasheet-67210000.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SCT3080KLGC11: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1200V N-channel Silicon Carbide (SiC) power MOSFET from ROHM, optimized for fast switching and low on-resistance.