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SCT3120ALGC11 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SCT3120ALGC11 product

SCT3120ALGC11

MOSFETs - Single

SiC MOSFETPower Transistor650V

The SCT3120ALGC11 is a high-performance 650V N-channel Silicon Carbide (SiC) MOSFET from ROHM, optimized for high-speed switching and low on-resistance in power conversion applications.

Best for

  • Solar inverters
  • DC/DC converters
  • Switch mode power supplies

Avoid if

  • Low-voltage applications where standard silicon MOSFETs are more cost-effective.

Check before use

  • Gate drive voltage levels and thermal design.

Key specifications

Drain-Source Voltage
650V
Continuous Drain Current
21A
On-Resistance
120mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
nan
MSL
nan
ECCN
EAR99
HTSUS
8541290095.0

Application

Power ConversionIndustrial

Datasheet

SCT3120ALGC11-Rohm-datasheet-67210004.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SCT3120ALGC11: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 650V N-channel SiC power MOSFET featuring low on-resistance (120mΩ) and fast switching capabilities, suitable for high-efficiency power electronics.