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SCT3160KLGC11 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SCT3160KLGC11 product

SCT3160KLGC11

MOSFETs - Single

SiC MOSFET1200VPower MOSFET

The SCT3160KLGC11 is a 1200V, 17A N-channel Silicon Carbide (SiC) MOSFET from ROHM, designed for high-efficiency power applications.

Best for

  • High-efficiency power conversion
  • High-frequency switching

Avoid if

  • Low-voltage applications where standard silicon MOSFETs are more cost-effective

Check before use

  • Gate drive voltage levels
  • Thermal resistance junction-to-case

Key specifications

Drain-Source Voltage
1200 V
Continuous Drain Current
17 A
On-Resistance
160 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

PowerIndustrial

Datasheet

Rohm-SCT3160KLGC11.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SCT3160KLGC11: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage N-channel SiC power MOSFET featuring low on-resistance and fast switching characteristics.