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SCTW40N120G2VAG AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SCTW40N120G2VAG product

SCTW40N120G2VAG

MOSFETs - Single

SiC MOSFETAutomotive1200VSTMicroelectronics

The SCTW40N120G2VAG is an automotive-grade 1200V SiC MOSFET designed for high-efficiency power conversion in EV/HEV systems.

Best for

  • Automotive traction inverters
  • High-voltage DC/DC converters

Avoid if

  • Low-voltage consumer electronics
  • Applications requiring standard silicon MOSFET pricing

Check before use

  • Gate driver voltage levels
  • Thermal interface material performance

Key specifications

VDS
1200 V
ID
33 A
RDS(on)
105 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

AutomotivePower Conversion

Datasheet

poYBAGHDM5-AbtV-AAONJViuiSQ548.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SCTW40N120G2VAG: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 2nd generation Silicon Carbide (SiC) Power MOSFET from STMicroelectronics, rated for 1200V and 33A, specifically qualified for automotive applications.