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SCTW70N120G2V AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SCTW70N120G2V product

SCTW70N120G2V

MOSFETs - Single

SiC MOSFET1200VPower Electronics

The SCTW70N120G2V is a high-performance 1200V SiC MOSFET optimized for high-efficiency power conversion.

Best for

  • High-efficiency power conversion
  • Industrial motor drives

Avoid if

  • Low-voltage applications where standard silicon MOSFETs are more cost-effective

Check before use

  • Gate drive voltage requirements
  • Thermal dissipation path

Key specifications

VDS
1200 V
ID
91 A
RDS(on)
21 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SupplyIndustrial Control

Datasheet

905501847e6659560c14548ed1c6b573_2211080600_STMicroelectronics-SCTW70N120G2V_C3281068.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SCTW70N120G2V: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 2nd generation Silicon Carbide (SiC) Power MOSFET from STMicroelectronics, rated for 1200V and 91A.