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SCTWA35N65G2V AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SCTWA35N65G2V product

SCTWA35N65G2V

MOSFETs - Single

SiC MOSFET650VPower Electronics

The SCTWA35N65G2V is a high-performance 650V SiC MOSFET from STMicroelectronics, optimized for high-efficiency power conversion and motor control.

Best for

  • High-efficiency power supplies
  • DC-DC converters
  • Industrial motor drives

Avoid if

  • Low-cost, low-power applications where standard silicon MOSFETs are sufficient.

Check before use

  • Gate drive voltage requirements and thermal dissipation needs.

Key specifications

VDS
650 V
ID
45 A
RDS(on)
55 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial Motor Control

Datasheet

2eb9d31dc552a73b89d0330b5a10d421_2211080600_STMicroelectronics-SCTWA35N65G2V_C3281008.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SCTWA35N65G2V: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 2nd generation Silicon Carbide (SiC) Power MOSFET rated for 650V and 45A, housed in a HiP247 long leads package.