SE036DNG Datasheet, Specs, Alternatives & ECAD | DOINGTER | PartGenie

AI summary

SE036DNG product

SE036DNG is a dual 60 V N-channel MOSFET for compact low-side or general power-switching circuits, with 36 mΩ maximum RDS(on) at 10 V gate drive.

Best for

Compact dual-MOSFET switching stages
Low-side power switching with 10 V gate drive

Avoid if

A documented automotive or safety qualification is required
Package dimensions or compliance declarations must be available before design release

Check before use

Use the 36 mΩ maximum value only for VGS = 10 V and ID = 4 A.
Assess conduction and switching loss at the actual junction temperature.
Confirm SOP-8D footprint and independent channel connections.

Key specifications

Configuration: Dual N-channel MOSFET
Drain-source voltage: 60 V
Continuous drain current: 4.5 A at TA = 25°C
On-resistance: 36 mΩ max at VGS = 10 V, ID = 4 A
Package: SOP-8D

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power switchingGeneral electronic switching

Datasheet

5bfa5c85aef5daacae41afc79b1bb67d_SE036DNG.pdf

800 KB

CAD Models

Download ECAD models for SE036DNG: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

SE036DNG is a DOINGTER dual N-channel trench MOSFET in an SOP-8D package. Each MOSFET channel has a 60 V drain-source rating.