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SGT50T65FD1P7 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SGT50T65FD1P7 product

SGT50T65FD1P7

Transistors - IGBTs - Single

IGBT650VField Stop

The SGT50T65FD1P7 is a 650V, 50A Field Stop IV IGBT suitable for high-efficiency power conversion.

Best for

  • Power supplies
  • Inverters
  • Welding equipment

Avoid if

  • Low-power or battery-operated circuits where switching losses are critical

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

Vce(max)
650 V
Ic(max)
50 A
Vce(sat)
2.2 V

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

582a90faea98426fc9e0a52e15c841a0_2208230930_Hangzhou-Silan-Microelectronics-SGT50T65FD1P7_C5123272.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SGT50T65FD1P7: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 650V, 50A IGBT using Silan's Field Stop IV technology, designed for efficient power switching.