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SH8K26-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SH8K26-HXY product

SH8K26-HXY

FETs

Dual N-ChannelMOSFET40VSOP-8

The SH8K26 is a dual N-channel MOSFET in an SOP-8 package, optimized for low-voltage switching and battery protection.

Best for

  • Battery protection circuits
  • Load switching
  • UPS systems

Avoid if

  • Applications requiring extremely high power dissipation beyond the 2.9W rating

Check before use

  • Gate drive voltage levels
  • Thermal design

Key specifications

VDS
40 V
ID
12 A
RDS(on)
16 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

383ae46f39aacdc9d1b2d9f8197eabfc_HXY MOSFET(华轩阳电子)&SH8K26-HXY.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SH8K26-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The SH8K26 is a dual N-channel enhancement mode MOSFET utilizing advanced trench technology, housed in an SOP-8 package.