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SI1012R-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI1012R-T1-GE3-HXY product

SI1012R-T1-GE3-HXY

MOSFETs - Single

N-ChannelMOSFET20VSOT-523

The SI1012R-T1-GE3 is a compact N-Channel MOSFET designed for low-voltage switching and battery protection.

Best for

  • Battery protection circuits
  • Load switching
  • Low-power portable electronics

Avoid if

  • High-current or high-power applications exceeding 0.8A or 0.15W

Check before use

  • Thermal management in the SOT-523 package

Key specifications

VDS
20 V
ID
0.8 A
RDS(on) @ 4.5V
< 250 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Battery ProtectionLoad Switching

Datasheet

dacb92c583035ad986e26c94bec60288_2403261740_HXY-MOSFET-SI1012R-T1-GE3-HXY_C22367113.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI1012R-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using trench technology, optimized for low gate charge and low RDS(ON) at 2.5V.