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SI1012X-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI1012X-T1-GE3-HXY product

SI1012X-T1-GE3-HXY

MOSFETs

N-ChannelMOSFETSOT-52320V

The SI1012X-T1-GE3 is a 20V N-Channel MOSFET in a compact SOT-523 package, optimized for low-voltage switching and battery protection.

Best for

  • Battery protection
  • Portable electronics

Avoid if

  • High-power applications exceeding 0.15W dissipation

Check before use

  • Thermal design and gate drive voltage levels

Key specifications

VDS
20 V
ID
0.8 A
RDS(on)
< 250 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Battery ManagementLoad Switching

Datasheet

6103800225cda6a67276488de5411125_2403261741_HXY-MOSFET-SI1012X-T1-GE3-HXY_C22367114.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI1012X-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using trench technology, suitable for low-voltage switching applications.