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SI1013X-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI1013X-T1-GE3-HXY product

SI1013X-T1-GE3-HXY

MOSFETs - Single

MOSFETP-ChannelSOT-523

The SI1013X-T1-GE3 is a -20V P-Channel MOSFET in a SOT-523 package, optimized for low-voltage battery protection and switching.

Best for

  • Battery protection
  • Load switching

Avoid if

  • High-power or high-voltage applications

Check before use

  • Gate threshold voltage compatibility

Key specifications

VDS
-20 V
ID
-0.66 A
RDS(on)
560 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

cf25b9674d01ba077522475ff3f59d2c_2403261740_HXY-MOSFET-SI1013X-T1-GE3-HXY_C22367061.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI1013X-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET using trench technology, designed for low-voltage switching applications.