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SI1308EDL-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI1308EDL-T1-GE3 product

SI1308EDL-T1-GE3

MOSFETs - Single

N-ChannelMOSFET30VSOT-323

The Si1308EDL is a 30 V N-Channel TrenchFET MOSFET in an SOT-323 package, ideal for space-constrained low-power switching applications.

Best for

  • Mobile devices
  • Low-power DC/DC conversion
  • Load switching

Avoid if

  • High-current applications exceeding 1.5 A
  • High-temperature environments without adequate heatsinking

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
30 V
ID
1.5 A
RDS(on)
0.132 Ω
Qg
1.4 nC

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541210095.0

Application

Consumer ElectronicsPower Management

Datasheet

134036.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI1308EDL-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The Si1308EDL is a 30 V N-Channel MOSFET from Vishay Siliconix, housed in a compact SOT-323 (SC-70) package.