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SI2300-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI2300-HXY product

SI2300-HXY

MOSFETs - Single

N-ChannelMOSFETSOT-2320V

The SI2300-HXY is a 20V N-Channel MOSFET in a SOT-23 package, suitable for low-voltage switching and battery protection.

Best for

  • Battery-powered devices
  • Low-voltage load switching

Avoid if

  • High-power applications exceeding 0.35W dissipation

Check before use

  • Thermal dissipation limits in your PCB layout

Key specifications

VDS
20 V
ID
6 A
RDS(on)
27 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

11631d504d389dfeed9c9087301302ad_2207201830_HXY-MOSFET-SI2300-HXY_C4748715.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI2300-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using trench technology, designed for efficient switching in compact applications.