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SI2300DS-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI2300DS-T1-GE3 product

SI2300DS-T1-GE3

MOSFETs - Single

N-ChannelMOSFET30VSOT-23

The Si2300DS is a 30V N-Channel TrenchFET MOSFET in a SOT-23 package, optimized for portable power management applications.

Best for

  • DC/DC converters
  • Load switches
  • Portable devices

Avoid if

  • High-power applications exceeding the thermal limits of the SOT-23 package

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
30 V
ID
3.6 A
RDS(on)
0.068 Ω

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541210095.0

Application

Power ManagementConsumer Electronics

Datasheet

babd01ba8c86ffc2a3d17722d00679f9_1805291118_Vishay-Intertech-SI2300DS-T1-GE3_C72271.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI2300DS-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The Si2300DS is a 30V N-Channel power MOSFET from Vishay Siliconix, utilizing TrenchFET technology for efficient switching in portable electronic devices.