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Si2301ADS-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Si2301ADS-HXY product

Si2301ADS-HXY

MOSFETs - Single

MOSFETP-ChannelSOT-23

The Si2301ADS is a P-Channel enhancement mode MOSFET in a SOT-23 package, designed for low-voltage switching applications.

Best for

  • Load switching
  • PWM control

Avoid if

  • High-voltage or high-current applications exceeding -20V or -2.3A

Check before use

  • Gate drive voltage levels

Key specifications

VDS
-20 V
ID
-2.3 A
RDS(ON)
140 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

0bdffc152dfa9ff8d52ac4769b6c4f2e_2404231719_HXY-MOSFET-Si2301ADS-HXY_C22367316.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for Si2301ADS-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel MOSFET using trench technology, optimized for low-voltage operation.