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Si2301BDS-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Si2301BDS-HXY product

Si2301BDS-HXY

MOSFETs - Single

MOSFETP-ChannelSOT-23

The Si2301BDS is a standard P-Channel MOSFET in a SOT-23 package, suitable for general-purpose load switching and battery protection.

Best for

  • Load switching
  • Battery protection

Avoid if

  • High-current applications exceeding 3A

Check before use

  • Gate threshold voltage

Key specifications

VDS
-20 V
ID
-3 A
RDS(ON)
80 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

01e019ccf68b6e5184c27bb49be86e93_2403261654_HXY-MOSFET-Si2301BDS-HXY_C22367202.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for Si2301BDS-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET using trench technology, designed for low-power switching applications.