SI2301CDS-T1-GE3-MS Datasheet, Specs, Alternatives & ECAD | MSKSEMI | PartGenie

AI summary

SI2301CDS-T1-GE3-MS product

The SI2301CDS-T1-GE3-MS is a P-Channel trench DMOS MOSFET in an SOT-23 package, rated for -20V and -3A, suitable for high-efficiency switching applications.

Best for

Notebook power management
Load switching
Battery protection circuits

Avoid if

Applications requiring high-voltage blocking above 20V
High-power designs exceeding SOT-23 thermal limits

Check before use

Gate drive voltage levels
Thermal dissipation requirements

Key specifications

VDS: -20 V
ID: -3 A
RDS(ON): 70 mΩ

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ManagementConsumer Electronics

Datasheet

73c6aa12d7db9ff3444a5304c3188f23_2212290930_MSKSEMI-SI2301CDS-T1-GE3-MS_C5343291.pdf

800 KB

CAD Models

Download ECAD models for SI2301CDS-T1-GE3-MS: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode power MOSFET using trench DMOS technology, optimized for fast switching and low on-state resistance.