It is a P-channel enhancement-mode MOSFET using advanced trench technology, optimized for low gate charge and low RDS(on).
SI2301DS-ES AI Analysis:
Datasheet, Specs, Alternatives & ECAD
AI summary
Key specifications
- VDS
- -20 V
- ID
- 2.3 A
- RDS(on)
- 90 mΩ
Compliance & Environment
- RoHS
- Pb-free
- REACH
- -
- MSL
- -
- ECCN
- -
- HTSUS
- -
Application
Power ManagementConsumer Electronics
Datasheet
CAD Models
Download ECAD models for SI2301DS-ES: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.
EDA Symbol
Schematic symbol for your EDA tool
PCB Footprint
Land pattern for PCB layout
3D Model
STEP file for mechanical design
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Alternative components
Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.
