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SI2302-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI2302-HXY product

SI2302-HXY

MOSFETs - Single

N-ChannelMOSFETSOT-2320V2.8A

The SI2302-HXY is a 20V N-Channel enhancement mode MOSFET in a SOT-23 package, designed for efficient low-voltage switching in battery protection and power management applications.

Best for

  • Portable battery-powered devices
  • Low-voltage load switching
  • General purpose power management

Avoid if

  • High-voltage applications exceeding 20V
  • High-current applications requiring >2.8A continuous current

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements on the PCB

Key specifications

VDS
20 V
ID
2.8 A
RDS(ON)
55 mΩ
Package
SOT-23

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

afd3f99a196a89039ab63a1396477677_2207201830_HXY-MOSFET-SI2302-HXY_C4748714.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI2302-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET utilizing advanced trench technology, optimized for low-voltage switching applications.