SI2302CDS-T1-GE3-CN Datasheet, Specs, Alternatives & ECAD | ChipNobo | PartGenie

AI summary

SI2302CDS-T1-GE3-CN product

SI2302CDS-T1-GE3-CN is a 20 V N-channel enhancement MOSFET in a 3-pin SOT-23 package, with specified low on-resistance at 2.5 V and 4.5 V gate drive.

Best for

compact low-voltage load switching
power management
low-side switching

Avoid if

the circuit exceeds the 20 V drain-source rating
high-temperature operation requires an unspecified current rating
automotive or qualified-device documentation is mandatory

Check before use

RDS(on) at the actual gate voltage
junction and PCB thermal performance
body-diode behavior
compliance and lifecycle documentation

Key specifications

Channel: N-channel enhancement MOSFET
VDS: 20 V
Continuous ID: 3.5 A at 25°C
RDS(on): 40 mΩ typ., 52 mΩ max. at 4.5 V gate drive
Package: SOT-23, 3 pins

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Low-side load switchingCompact power managementMotor or actuator switching

Datasheet

1a51bcf528ad971b1e1e44011127ec7d_SI2302CDS-T1-GE3-CN.pdf

800 KB

CAD Models

Download ECAD models for SI2302CDS-T1-GE3-CN: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 20 V N-channel enhancement-mode power MOSFET from ChipNobo, supplied in a SOT-23 surface-mount package.