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Si2302CDS-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Si2302CDS-T1-GE3-HXY product

Si2302CDS-T1-GE3-HXY

MOSFETs - Single

N-ChannelMOSFETSOT-2320V

The Si2302CDS-T1-GE3 is a 20V, 2.3A N-Channel MOSFET in a SOT-23 package, optimized for low-voltage switching and battery protection.

Best for

  • Battery protection
  • Load switching

Avoid if

  • High-voltage applications exceeding 20V

Check before use

  • Thermal dissipation limits

Key specifications

VDS
20 V
ID
2.3 A
RDS(on)
60 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

4340ab72e1c7a756f95bdf861800cac4_2403261742_HXY-MOSFET-Si2302CDS-T1-GE3-HXY_C22367241.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for Si2302CDS-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for low-voltage applications, featuring trench technology for low RDS(ON) and low gate charge.