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SI2302CDS-T1-GE3 AI Analysis:
Specs, Applications & Alternatives

AI summary

SI2302CDS-T1-GE3 product

SI2302CDS-T1-GE3

MOSFETs - Single

N-ChannelMOSFET20VSOT-23TrenchFET

The Si2302CDS-T1-GE3 is a high-performance 20V N-Channel TrenchFET MOSFET in a SOT-23 package, ideal for portable power management.

Best for

  • Portable electronics
  • Load switching
  • DC/DC conversion

Avoid if

  • Applications requiring >20V VDS
  • High-power designs exceeding SOT-23 thermal limits

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage compatibility

Key specifications

VDS
20 V
ID
2.9 A
RDS(on)
0.057 Ω
Package
SOT-23

Compliance & Environment

RoHS
ROHS3 Compliant

Application

Power ManagementConsumer Electronics

Datasheet

si2302cds.pdf

800 KB

Datasheet AI

CAD Models

EDA symbol, PCB footprint, and 3D model for this component. Supported tools include Altium, KiCad, Eagle, and more.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The Si2302CDS is a 20V N-Channel power MOSFET from Vishay Siliconix, utilizing TrenchFET technology for efficient power switching.