For BusinessPricing
Request a demo

SI2302CDS-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI2302CDS-T1-GE3 product

SI2302CDS-T1-GE3

MOSFETs - Single

N-ChannelMOSFET20VSOT-23TrenchFET

The Si2302CDS-T1-GE3 is a high-performance 20V N-Channel TrenchFET MOSFET in a SOT-23 package, ideal for portable power management.

Best for

  • Portable electronics
  • Load switching
  • DC/DC conversion

Avoid if

  • Applications requiring >20V VDS
  • High-power designs exceeding SOT-23 thermal limits

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage compatibility

Key specifications

VDS
20 V
ID
2.9 A
RDS(on)
0.057 Ω
Package
SOT-23

Compliance & Environment

RoHS
ROHS3 Compliant

Application

Power ManagementConsumer Electronics

Datasheet

si2302cds.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI2302CDS-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The Si2302CDS is a 20V N-Channel power MOSFET from Vishay Siliconix, utilizing TrenchFET technology for efficient power switching.